Proposal of a GaN/SiC Hybrid Field-Effect Transistor for Power Switching Applications

被引：46
|
作者：
Wei, Jin [1 ]
Jiang, Huaping [2 ,3 ]
Jiang, Qimeng [1 ]
Chen, Kevin J. [1 ]
机构：
[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Hong Kong, Peoples R China
[2] Dynex Semicond Ltd, Lincoln LN6 3LF, England
[3] Zhuzhou CRRC Times Elect Co Ltd, Zhuzhou 412001, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2016年 / 63卷 / 06期
关键词：
GaN/SiC; gate charge; high-electron-mobility transistor (HEMT); hybrid field-effect transistor (HyFET); reverse transfer capacitance; GAN; MOBILITY;
D O I：
10.1109/TED.2016.2557811
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A GaN/SiC hybrid field-effect transistor (HyFET) is proposed as a high-voltage power device that provides a high-mobility lateral AlGaN/GaN channel to reduce the channel resistance and a vertical SiC drift region to sustain the high OFF-state voltage. The performance of the HyFET is evaluated by numerical device simulations. Compared with the conventional SiC MOSFET, the HyFET exhibits a greatly reduced RON together with a low C-GD and low gate charges. The figures of merit Q(G) x R-ON and Q(GD) x R-ON of the HyFET are dramatically improved.
引用
收藏
页码：2469 / 2473
页数：5
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