Proposal of a GaN/SiC Hybrid Field-Effect Transistor for Power Switching Applications

被引：46
|
作者：
Wei, Jin [1 ]
Jiang, Huaping [2 ,3 ]
Jiang, Qimeng [1 ]
Chen, Kevin J. [1 ]
机构：
[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Hong Kong, Peoples R China
[2] Dynex Semicond Ltd, Lincoln LN6 3LF, England
[3] Zhuzhou CRRC Times Elect Co Ltd, Zhuzhou 412001, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2016年 / 63卷 / 06期
关键词：
GaN/SiC; gate charge; high-electron-mobility transistor (HEMT); hybrid field-effect transistor (HyFET); reverse transfer capacitance; GAN; MOBILITY;
D O I：
10.1109/TED.2016.2557811
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A GaN/SiC hybrid field-effect transistor (HyFET) is proposed as a high-voltage power device that provides a high-mobility lateral AlGaN/GaN channel to reduce the channel resistance and a vertical SiC drift region to sustain the high OFF-state voltage. The performance of the HyFET is evaluated by numerical device simulations. Compared with the conventional SiC MOSFET, the HyFET exhibits a greatly reduced RON together with a low C-GD and low gate charges. The figures of merit Q(G) x R-ON and Q(GD) x R-ON of the HyFET are dramatically improved.
引用
收藏
页码：2469 / 2473
页数：5
相关论文
共 50 条
  • [11] A study of temperature field in a GaN heterostructure field-effect transistor
    Baig, MA
    Khandkar, MZH
    Khan, JA
    Khan, MA
    Simin, G
    Wang, H
    MICROELECTRONICS JOURNAL, 2003, 34 (03) : 207 - 214
  • [12] A study of temperature field in a GaN heterostructure field-effect transistor
    Baig, MA
    Khandkar, MZ
    Khan, JA
    Khan, MA
    Simin, G
    Wang, H
    THERMAL CHALLENGES IN NEXT GENERATION ELECTRONIC SYSTEMS, 2002, : 367 - 374
  • [13] AlGaN/GaInN/GaN heterostructure field-effect transistor
    Ikki, Hiromichi
    Isobe, Yasuhiro
    Iida, Daisuke
    Iwaya, Motoaki
    Takeuchi, Tetsuya
    Kamiyama, Satoshi
    Akasaki, Isamu
    Amano, Hiroshi
    Bandoh, Akira
    Udagawa, Takashi
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208 (07): : 1614 - 1616
  • [14] Design and Analysis of Nanosheet Field-Effect Transistor for High-Speed Switching Applications
    Kumar R.
    Kumar E.S.
    Vijayalakshmi S.
    Prasad D.
    Mohamedyaseen A.
    Choubey S.B.
    Vignesh N.A.
    Johnson Santhosh A.
    Journal of Nanomaterials, 2023, 2023
  • [15] GaN Double Heterojunction Field Effect Transistor for microwave and millimeterwave power applications
    Micovic, M
    Hashimoto, P
    Hu, M
    Milosavljevic, I
    Duvall, J
    Willadsen, PJ
    Wong, WS
    Conway, AM
    Kurdoghlian, A
    Deelman, PW
    Moon, JS
    Schmitz, A
    Delaney, MJ
    IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, : 807 - 810
  • [16] A Review on a Negative Capacitance Field-Effect Transistor for Low-Power Applications
    Bijit Malvika
    Kavicharan Choudhuri
    Journal of Electronic Materials, 2022, 51 : 923 - 937
  • [17] V-GROOVE POWER JUNCTION FIELD-EFFECT TRANSISTOR FOR VHF APPLICATIONS
    MOK, TD
    SALAMA, CAT
    ELECTRONICS LETTERS, 1976, 12 (22) : 582 - 583
  • [18] A Review on a Negative Capacitance Field-Effect Transistor for Low-Power Applications
    Malvika
    Choudhuri, Bijit
    Mummaneni, Kavicharan
    JOURNAL OF ELECTRONIC MATERIALS, 2022, 51 (03) : 923 - 937
  • [19] Proposal for a Negative Capacitance Topological Quantum Field-Effect Transistor
    Fuhrer, M. S.
    Edmonds, M. T.
    Culcer, D.
    Nadeem, M.
    Wang, X.
    Medhekar, N.
    Yin, Y.
    Cole, J. H.
    2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2021,
  • [20] Proposal for a single-molecule field-effect transistor for phonons
    Menezes, Marcos G.
    Saraiva-Souza, Aldilene
    Del Nero, Jordan
    Capaz, Rodrigo B.
    PHYSICAL REVIEW B, 2010, 81 (01)
12345