EELS investigation of Pd thin film growth on aluminum oxide substrate

被引:7
|
作者
Stará, I
Gruzza, B
Matolín, V
机构
[1] Charles Univ, Dept Elect & Vacuum Phys, CR-18000 Prague 8, Czech Republic
[2] Univ Blaise Pascal, LASMEA, F-63177 Aubiere, France
关键词
EELS; thin film growth; Pd; aluminum oxide;
D O I
10.1016/S0368-2048(00)00337-6
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
Electron energy loss spectroscopy (EELS) operated at energies from 250 to 1500 eV was used for coverage analysis of supported non-continuous layers. The alumina supported very thin Pd films were prepared by depositing small amounts of Pd on thermally oxidized Al substrate. The film growth was investigated via variations of intensity of excited Pd plasmons and of alumina energy losses. The overlayer coverage was determined from the relative contribution of deposit and substrate signal to the composite spectra taking into account the backreflecting capacity of both materials and loss event probabilities [Surf. Rev. Lett. 6 (1999) 801]. The results show high sensitivity of the EELS method to deposit thickness and continuity. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:575 / 580
页数:6
相关论文
共 50 条
  • [31] Aluminum-seeded growth of microcrystalline Si thin film onto SnO2 substrate
    Lee, CH
    Lim, KS
    APPLIED PHYSICS LETTERS, 2000, 77 (13) : 2027 - 2029
  • [32] Molecular Mechanisms of Aluminum Oxide Thin Film Growth on Polystyrene during Atomic Layer Deposition
    Puttaswamy, Manjunath
    Haugshoj, Kenneth Brian
    Christensen, Leif Hojslet
    Kingshott, Peter
    CHEMISTRY-A EUROPEAN JOURNAL, 2010, 16 (47) : 13925 - 13929
  • [33] Facile growth of aluminum oxide thin film by chemical liquid deposition and its application in devices
    Li, Dianlun
    Ruan, Lu
    Sun, Jie
    Wu, Chaoxing
    Yan, Ziwen
    Lin, Jintang
    Yan, Qun
    NANOTECHNOLOGY REVIEWS, 2020, 9 (01) : 876 - 885
  • [34] Investigation of GaN/InGaN thin film growth on ITO substrate by thermionic vacuum arc (TVA)
    Erdogan, Erman
    Kundakci, Mutlu
    SN APPLIED SCIENCES, 2019, 1 (01):
  • [35] Investigation of GaN/InGaN thin film growth on ITO substrate by thermionic vacuum arc (TVA)
    Erman Erdoğan
    Mutlu Kundakçı
    SN Applied Sciences, 2019, 1
  • [36] Piezoelectric ultra-sensitive aluminum nitride thin film on flexible aluminum substrate
    H. Bishara
    S. Berger
    Journal of Materials Science, 2018, 53 : 1246 - 1255
  • [37] Piezoelectric ultra-sensitive aluminum nitride thin film on flexible aluminum substrate
    Bishara, H.
    Berger, S.
    JOURNAL OF MATERIALS SCIENCE, 2018, 53 (02) : 1246 - 1255
  • [38] Fabrication of transparent conductive aluminum zinc oxide nanostructured thin film on polycarbonate substrate for heat mirror applications
    Eshaghi, A.
    Hajkarimi, M.
    Graeli, A.
    JOURNAL OF OPTICAL TECHNOLOGY, 2015, 82 (01) : 51 - 54
  • [39] Effect of thickness on the optical and electrical properties of aluminum zinc oxide nanostructured thin film deposited on polycarbonate substrate
    Eshaghi, Akbar
    Mohammad, Hajkarimi
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2017, 11 (1-2): : 72 - 76
  • [40] Growth of germanium–carbide thin film on crystal substrate
    Genene Tessema
    Mulugeta Bekele
    Reiner Vianden
    Journal of Materials Science: Materials in Electronics, 2010, 21 : 1144 - 1148