UTSi® CMOS technology for system-on-chip solution

被引:8
|
作者
Megahed, M [1 ]
Burgener, M [1 ]
Cable, J [1 ]
Staab, D [1 ]
Reedy, R [1 ]
机构
[1] Peregrine Semicond Corp, San Diego, CA 92121 USA
来源
1998 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS: DIGEST OF PAPERS | 1998年
关键词
D O I
10.1109/SMIC.1998.750201
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
UTSi (Ultra-Thin Silicon) on insulator technology has the potential of integrating digital, analog, RF and RF matching circuitry on a single chip. The technology is based on bulk CMOS VLSI technology with fully integrated passive components. UTSi CMOS technology provides high speed and superior RF performance transistors, high quality passive elements and excellent isolation due to the insulating substrate In this paper, UTSi technology will be briefly reviewed and critical active device performance will be presented. Results show that UTSi CMOS process presents a possible road map for system-on-chip solution for wireless communication systems, especially in low power applications.
引用
收藏
页码:94 / 99
页数:6
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