Enhancement-mode n-channel GaN MOSFETs fabricated on p-GaN using HfO2 as gate oxide

被引：14

作者：

Sugiura, S. ^{[1
]}

Kishimoto, S.

Mizutani, T.

Kuroda, M.

Ueda, T.

Tanaka, T.

机构：

[1] Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] Nagoya Univ, Venture Business Lab, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[3] Matsushita Elect Ind Co Ltd, Semicond Device Res Ctr Semicond Co, Nagaokakyou 6178520, Japan

来源：

ELECTRONICS LETTERS | 2007年 / 43卷 / 17期

关键词：

D O I：

10.1049/el:20071814

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Enhancement-mode n-channel GaN MOSFETs with overlap gate structure using thick HfO2 as a gate insulator have been fabricated. The maximum transconductance of 45 mS/mm is seven times larger, to our knowledge, than the best-reported value of GaN MOSFETs with SiO2 gate oxide.

引用

页码：952 / 953

页数：2

共 50 条

[21] An Enhancement-mode AlGaN/GaN HEMT with Island-Ohmic p-GaN featuring stable threshold voltage and large gate swing
Dai, Xinyue
Jiang, Qimeng
Feng, Chao
Ji, Zhongchen
Huang, Sen
Xing, Runxian
Yu, Guohao
Gao, Xinguo
Wang, Xinhua
Liu, Xinyu
[J]. 2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024, 2024, : 168 - 171
[22] p-GaN Gate Enhancement-Mode HEMT Through a High Tolerance Self-Terminated Etching Process
Zhou, Yu
Zhong, Yaozong
Gao, Hongwei
Dai, Shujun
He, Junlei
Feng, Meixin
Zhao, Yanfei
Sun, Qian
An Dingsun
Yang, Hui
[J]. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2017, 5 (05): : 340 - 346
[23] Development of Enhancement-Mode GaN p-FET With Post-Etch Wet Treatment on p-GaN Gate HEMT Epi-Wafer
Li, Teng
Zhang, Meng
Yu, Jingjing
Cui, Jiawei
Yang, Junjie
Wu, Yanlin
Yang, Han
Zhang, Yamin
Yang, Xuelin
Wang, Maojun
Feng, Shiwei
Shen, Bo
Wei, Jin
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (04) : 2361 - 2366
[24] Control of threshold voltage of enhancement-mode AlxGa1-xN/GaN junction heterostructure field-effect transistors using p-GaN gate
Fujii, Takahiro
Tsuyukuchi, Norio
Hirose, Yoshikazu
Iwaya, Motoaki
Kamiyama, Satoshi
Amano, Hiroshi
Akasaki, Isamu
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (01): : 115 - 118
[25] AlGaN/GaN MOSHFETs with HfO2 gate oxide: A simulation study
Hayashi, Y.
Sugiura, S.
Kishimoto, S.
Mizutani, T.
[J]. SOLID-STATE ELECTRONICS, 2010, 54 (11) : 1367 - 1371
[26] Enhancement-mode n-GaN gate p-channel heterostructure field effect transistors based on GaN/AlGaN 2D hole gas
Chen, Fu
Hao, Ronghui
Yu, Guohao
Zhang, Xiaodong
Song, Liang
Wang, Jinyan
Cai, Yong
Zhang, Baoshun
[J]. APPLIED PHYSICS LETTERS, 2019, 115 (11)
[27] Reverse Blocking Enhancement-Mode AlGaN/GaN HEMTs with Hybrid p-GaN Ohmic Drain on the Si Substrates
Zhao, Yaopeng
Ren, Dong
Luo, Pan
Wang, Chong
Yang, Lei
Wen, Haibing
Liu, Kai
Li, Ang
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2024, 221 (04):
[28] Field-induced Acceptor Ionization in Enhancement-mode GaN p-MOSFETs
Chowdhury, Nadim
Xie, Qingyun
Niroula, John
Rajput, Nitul S.
Cheng, Kai
Then, Han Wui
Palacios, Tomas
[J]. 2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2020,
[29] Simulation and analysis of enhancement-mode AlGaN/GaN HEMT with P-I-N junction gate
Jia, Mao
Hou, Bin
Yang, Ling
Zhang, Meng
Chang, Qingyuan
Niu, Xuerui
Shi, Chunzhou
Du, Jiale
Wu, Mei
Lu, Hao
Ma, Xiaohua
Hao, Yue
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2024, 57 (26)
[30] Threshold voltage shift model for p-GaN gate enhancement mode HEMT
Zhang, Cong
Yao, Ruohe
[J]. MICROELECTRONICS RELIABILITY, 2023, 147

← 1 2 3 4 5 →