Enhancement-mode n-channel GaN MOSFETs fabricated on p-GaN using HfO2 as gate oxide

被引：14
|
作者：
Sugiura, S. [1 ]
Kishimoto, S.
Mizutani, T.
Kuroda, M.
Ueda, T.
Tanaka, T.
机构：
[1] Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan
[2] Nagoya Univ, Venture Business Lab, Chikusa Ku, Nagoya, Aichi 4648603, Japan
[3] Matsushita Elect Ind Co Ltd, Semicond Device Res Ctr Semicond Co, Nagaokakyou 6178520, Japan
来源：
ELECTRONICS LETTERS | 2007年 / 43卷 / 17期
关键词：
D O I：
10.1049/el:20071814
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Enhancement-mode n-channel GaN MOSFETs with overlap gate structure using thick HfO2 as a gate insulator have been fabricated. The maximum transconductance of 45 mS/mm is seven times larger, to our knowledge, than the best-reported value of GaN MOSFETs with SiO2 gate oxide.
引用
收藏
页码：952 / 953
页数：2
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