Enhancement-mode n-channel GaN MOSFETs fabricated on p-GaN using HfO2 as gate oxide

被引：14

作者：

Sugiura, S. ^{[1
]}

Kishimoto, S.

Mizutani, T.

Kuroda, M.

Ueda, T.

Tanaka, T.

机构：

[1] Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] Nagoya Univ, Venture Business Lab, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[3] Matsushita Elect Ind Co Ltd, Semicond Device Res Ctr Semicond Co, Nagaokakyou 6178520, Japan

来源：

ELECTRONICS LETTERS | 2007年 / 43卷 / 17期

关键词：

D O I：

10.1049/el:20071814

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Enhancement-mode n-channel GaN MOSFETs with overlap gate structure using thick HfO2 as a gate insulator have been fabricated. The maximum transconductance of 45 mS/mm is seven times larger, to our knowledge, than the best-reported value of GaN MOSFETs with SiO2 gate oxide.

引用

页码：952 / 953

页数：2

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