A Highly Linear Dual-Stage Amplifier With Beyond 1.75-THz Gain-Bandwidth Product

被引：0
|
作者：
Shivan, T. [1 ]
Hossain, M. [1 ]
Doerner, R. [1 ]
Yacoub, H. [1 ]
Johansen, T. K. [2 ]
Heinrich, W. [1 ]
Krozer, V. [1 ]
机构：
[1] Ferdinand Braun Inst FBH, D-12489 Berlin, Germany
[2] Tech Univ Denmark DTU, Dept Elect Engn, DK-2800 Lyngby, Denmark
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2021年 / 31卷 / 06期
基金：
欧盟地平线“2020”;
关键词：
Bandwidth; Gain; Linearity; Optical fiber amplifiers; DH-HEMTs; Optical variables measurement; Optical buffering; Distributed amplifier (DA); gain-bandwidth product (GBP); InP double heterojunction bipolar transistor (DHBT); monolithic microwave integrated circuit (MMIC); DISTRIBUTED-AMPLIFIER;
D O I：
10.1109/LMWC.2021.3067145
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work reports a multipurpose highly linear ultrawideband amplifier with a gain-bandwidth product (GBP) of 1.75 THz, the highest reported in any monolithic microwave integrated circuit (MMIC) process. A transimpedance amplifier is cascaded with a distributed amplifier, emulating a receiver subsystem. Using a diamond heat spreader, to dissipate heat from transistors, the cascaded amplification subsystem can achieve very high output third-order-intercept point (OIP3) from 20 to 24 dBm when measured between 5 and 65 GHz. A small-signal average gain of 24 dB is observed over a frequency range exceeding the maximum measurable bandwidth from dc to 110 GHz. Compared with other ultrawideband MMIC amplifiers beyond 110-GHz bandwidth, the circuit offers a unique combination of high linearity (OIP3) and high gain. As a result, the cascaded amplifier is suitable for applications in optical-electrical converters, spectroscopy, and ultrawideband measurement systems in the subterahertz frequency range.
引用
收藏
页码：717 / 720
页数：4
相关论文
共 50 条
  • [41] FURTHER COMMENT ON DOUBLE-PUMPED X-BAND PARAMETRIC AMPLIFIER WITH EXTREMELY LARGE GAIN-BANDWIDTH PRODUCT
    DEFILIPPIO, TN
    LOMBARDO, P
    NEUF, D
    [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (11): : 2378 - &
  • [42] Dual-stage L-band erbium-doped fiber amplifier for gain enhancement
    [J]. Harun, S.W., 1600, Japan Society of Applied Physics (42):
  • [43] Enhancement of Operational Amplifier Gain-Bandwidth Product used in Common-mode Active EMI Filter Compensation Circuit
    Tarateeraseth, Vuttipon
    [J]. 2013 10TH INTERNATIONAL CONFERENCE ON ELECTRICAL ENGINEERING/ELECTRONICS, COMPUTER, TELECOMMUNICATIONS AND INFORMATION TECHNOLOGY (ECTI-CON), 2013,
  • [44] 1.4-THz gain-bandwidth product InP-HEMTs preamplifier using an improved Cherry-Hooper topology
    Sato, M
    Shigematsu, H
    Inoue, Y
    Arai, T
    Sawada, K
    Takahashi, T
    Makiyama, K
    Hirose, T
    [J]. GAAS IC SYMPOSIUM - 24TH ANNUAL, TECHNICAL DIGEST 2002, 2002, : 167 - 170
  • [45] Dual-stage gain-clamped erbium-doped fiber amplifier with fiber Bragg grating
    Mahdi, M. A.
    Zamzuri, A. K.
    Ahmad, A.
    Ali, M. I. Md.
    Mohamad, R.
    [J]. LASER PHYSICS LETTERS, 2008, 5 (04) : 296 - 299
  • [46] A GaAs MHEMT distributed amplifier with 300-GHz gain-bandwidth product for 40-Gb/s optical applications
    Heins, MS
    Campbell, CF
    Kao, MY
    Muir, ME
    Carroll, JM
    [J]. 2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2002, : 1061 - 1064
  • [47] A 56 Gbit/s 0.35 μm SiGe Limiting Amplifier with 2.4 THz Gain-Bandwidth-Product
    Groezing, Markus
    Schmidt, Martin
    Berroth, Manfred
    [J]. 2010 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS), 2010,
  • [48] Gain-Bandwidth Adjusting Technique of A 36.1 GHz Single Stage Low Noise Amplifier Using 0.13μm CMOS Process
    Rashid, S. M. Shahriar
    Ali, Sheikh Nijam
    Roy, Apratim
    Rashid, A. B. M. H.
    [J]. 11TH INTERNATIONAL CONFERENCE ON ADVANCED COMMUNICATION TECHNOLOGY, VOLS I-III, PROCEEDINGS,: UBIQUITOUS ICT CONVERGENCE MAKES LIFE BETTER!, 2009, : 184 - 188
  • [49] Limiting Amplifier with 25 THz Gain-Bandwidth-Product and Internal Amplitude Control for Data Rates beyond 50 Gbit/s in 130 nm SiGe
    Staerke, Paul
    Carta, Corrado
    Ellinger, Frank
    [J]. 2019 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2019, : 412 - 415
  • [50] Theoretical Achievement of THz Gain-Bandwidth Product of Wafer-Bonded InGaAs/Si Avalanche Photodiodes With Poly-Si Bonding Layer
    Ke, Shaoying
    Xiao, Xiaoting
    Jiao, Jinlong
    Chen, Xiaoqiang
    Huang, Zhiwei
    Zhou, Jinrong
    Chen, Songyan
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (03) : 1123 - 1128
12345