Spatial Current Dynamics Of Turn-On Of High Power Laser-Thyristors Based On AlGaAs/GaAs Heterostructures

被引：0

作者：

Soboleva, O. S. ^{[1
]}

Podoskin, A. A. ^{[1
]}

Golovin, V. S. ^{[1
]}

Gavrina, P. S. ^{[1
]}

Romanovich, D. N. ^{[1
,2
]}

Vavilova, L. S. ^{[1
]}

Yuferev, V. S. ^{[1
]}

Pikhtin, N. A. ^{[1
]}

Slipchenko, S. O. ^{[1
]}

机构：

[1] Ioffe Inst, St Petersburg 194021, Russia

[2] St Petersburg Electrotech Univ LETI, St Petersburg 197376, Russia

来源：

2018 INTERNATIONAL CONFERENCE LASER OPTICS (ICLO 2018) | 2018年

关键词：

laser-thyristor; nanosecond pulse laser; semiconductor N-p-N-i-P heterostructure; current localization;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A two-dimensional dynamic simulation of the laser-thyristor turn-on has been carried out. It has been found that the localization of the current during laser-thyristor turn-on is determined by the presence of impact ionization. Spatial current localization reduces the radiative efficiency and the peak power only in the laser pulse generation mode with a duration of few nanoseconds.

引用

页码：165 / 165

页数：1

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