Spatial Current Dynamics Of Turn-On Of High Power Laser-Thyristors Based On AlGaAs/GaAs Heterostructures

被引:0
|
作者
Soboleva, O. S. [1 ]
Podoskin, A. A. [1 ]
Golovin, V. S. [1 ]
Gavrina, P. S. [1 ]
Romanovich, D. N. [1 ,2 ]
Vavilova, L. S. [1 ]
Yuferev, V. S. [1 ]
Pikhtin, N. A. [1 ]
Slipchenko, S. O. [1 ]
机构
[1] Ioffe Inst, St Petersburg 194021, Russia
[2] St Petersburg Electrotech Univ LETI, St Petersburg 197376, Russia
来源
2018 INTERNATIONAL CONFERENCE LASER OPTICS (ICLO 2018) | 2018年
关键词
laser-thyristor; nanosecond pulse laser; semiconductor N-p-N-i-P heterostructure; current localization;
D O I
暂无
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A two-dimensional dynamic simulation of the laser-thyristor turn-on has been carried out. It has been found that the localization of the current during laser-thyristor turn-on is determined by the presence of impact ionization. Spatial current localization reduces the radiative efficiency and the peak power only in the laser pulse generation mode with a duration of few nanoseconds.
引用
收藏
页码:165 / 165
页数:1
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