Nonlinear model of InP/GaAsSb/InP DHBT process for design of a Q-Band MMIC oscillator

被引：0
|
作者：
Laurent, S. [1 ]
Callet, G. [1 ]
Nallatamby, J. C. [1 ]
Prigent, M. [1 ]
Nodjiadjim, V. [2 ]
Riet, M. [2 ]
机构：
[1] Univ Limoges, Xlim Dep C2S2, 7 Rue Jules Valles, F-19100 Brive, France
[2] Alcatel Thales 3 5 Lab, F-91460 Marcoussis, France
来源：
2010 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2010年
关键词：
NOISE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the design of a MMIC oscillator operating at a 45 GHz frequency. This circuit was made by Alcatel-Thales III-V Lab with the new InP/GaAsSb/InP DHBT submicronic technology (We=700 nm). This transistor has a 15-m-long two-finger emitter. This paper describes the complete nonlinear modeling of heterojunction bipolar transistor used in this circuit. The interest of the methodology used to design this oscillator, is to be able to choose a nonlinear operating condition of the transistor from a study in amplifier mode. The oscillator simulation and measurement results are compared.
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页码：270 / 273
页数：4
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