480-GHz fmax in InP/GaAsSb/InP DHBT With New Base Isolation μ-Airbridge Design

被引：5
|
作者：
Zaknoune, M. [1 ]
Mairiaux, E. [1 ]
Roelens, Y. [1 ]
Waldhoff, N. [1 ]
Rouchy, U. [2 ]
Frijlink, P. [2 ]
Rocchi, M. [2 ]
Maher, H. [2 ]
机构：
[1] Inst Elect Microelect & Nanotechnol, F-59652 Villeneuve, France
[2] OMMIC, F-94450 Limeil Brevannes, France
来源：
IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 10期
关键词：
Double heterojunction bipolar transistor (DHBT); GaAsSb/InP; high f(max); MOCVD;
D O I：
10.1109/LED.2012.2210187
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Self-aligned 0.55 x 3.5 mu m(2) emitter InP/GaAsSb/InP double heterojunction bipolar transistors demonstrating an f(t) of 310 GHz and an f(max) of 480 GHz are reported. Common-emitter current gain of 24, together with a breakdown voltage of 4.6 V, is measured. The devices were fabricated with a triple-mesa process and easily fabricated with a new base isolation mu-airbridge design which, moreover, significantly reduced the base-collector capacitance C-BC.
引用
收藏
页码：1381 / 1383
页数：3
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