First InP/GaAsSb/InP DHBT Ka-band MMIC oscillator

被引：1
|
作者：
Zhu, Xin [1 ,2 ]
Wang, Jing [1 ]
Pavlidis, Dimitris [1 ,3 ]
机构：
[1] Univ Michigan, Dept Elect Engn & Comp Sci, 1301 Beal Ave, Ann Arbor, MI 48109 USA
[2] PDF Solut Inc, San Jose, CA 95110 USA
[3] Techn Univ Darmstadt, Inst Microwave Engn, Dept High Frequency Elect, D-64283 Darmstadt, Germany
来源：
2006 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE | 2006年
关键词：
heterojunction bipolar transistors; microwave oscillators; MMICs;
D O I：
10.1109/EMICC.2006.282774
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The demonstration of the first MMIC oscillator using novel InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) is presented. The oscillator delivered an output power of 3.2 dBm at 34.9GHz with DC to RF conversion efficiency of 10.9%. The corresponding phase noise at 1MHZ offset from the carrier frequency was -92dBc/Hz.
引用
收藏
页码：153 / +
页数：2
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