Field emission properties of pointed cathodes based on graphene films on SiC

被引：11
|
作者：
Konakova, R. V. [1 ]
Okhrimenko, O. B. [1 ]
Kolomys, A. F. [1 ]
Strel'chuk, V. V. [1 ]
Svetlichnyi, A. M. [2 ]
Ageev, O. A. [2 ]
Volkov, E. Yu. [3 ]
Kolomiitsev, A. S. [2 ]
Zhityaev, I. L. [2 ]
Spiridonov, O. B. [4 ]
机构：
[1] Natl Acad Sci Ukraine, Lashkarev Inst Phys Semicond, Pr Nauky 45, UA-03028 Kiev, Ukraine
[2] South Fed Univ, Inst Nanotechnol Elect & Instrument Making, Taganrog 347900, Russia
[3] South Laser Innovat & Technol Ctr, Taganrog 347900, Russia
[4] South Fed Univ, Sci Design Dept Modeling & Control Syst, Taganrog 347900, Russia
来源：
JOURNAL OF SUPERHARD MATERIALS | 2016年 / 38卷 / 04期
关键词：
pointed cathode; graphene; silicon carbide; work function;
D O I：
10.3103/S1063457616040031
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Electrical properties of low-threshold field emission cathodes produced by growth nanocluster graphene films on the pointed surface of heavily doped n +SiC by sublimation epitaxy have been considered. The quality of the graphene coating has been assessed based on the morphological studies and Raman spectroscopy. Using the volt-ampere characteristics the work function from a pointed cathode with graphene coating was calculated (similar to 0.76 eV). Such a low value of the work function is explained on the assumptions that the graphene film has the nanocluster nature and the sources of the field emission are graphene nanoclusters.
引用
收藏
页码：235 / 240
页数：6
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