Characterization of field-emission cathodes based on graphene films on SiC

被引：0
|
作者：
R. V. Konakova
O. B. Okhrimenko
A. M. Svetlichnyi
O. A. Ageev
E. Yu. Volkov
A. S. Kolomiytsev
I. L. Jityaev
O. B. Spiridonov
机构：
[1] National Academy of Sciences,Lashkaryov Institute of Semiconductor Physics
[2] Southern Federal University,Taganrog Institute of Technology
[3] Southern Laser Technology Center,undefined
来源：
Semiconductors | 2015年 / 49卷
关键词：
Graphene Film; Interelectrode Distance; Electron Work Function; Field Emission Cathode; Remove Silicon Oxide;
D O I：
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中图分类号：
学科分类号：
摘要：
The properties of a point field-emission cathode representing a structure in the form of a silicon carbide tip coated with a thin graphene film are assessed. For the point cathode with the graphene coating, the current–voltage characteristics are constructed in the Fowler–Nordheim coordinates; the work functions φ of the point cathode are calculated by their slope. The possibility of forming heavily doped n+-SiC on the point surface by the sublimation of low-threshold field emission cathodes with low threshold electric fields and field-emission currents is shown.
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页码：1242 / 1245
页数：3
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