Field emission properties of doped DLC and SiC films

被引：0
|
作者：
Evtukh, AA
Klyui, NI
Litovehenko, VG
Litvin, YM
Puzikov, VM
Semenov, AV
机构：
[1] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-03028 Kiev, Ukraine
[2] Natl Acad Sci Ukraine, Inst Monocrystals, UA-61001 Kharkov, Ukraine
来源：
PHYSICS OF LOW-DIMENSIONAL STRUCTURES | 2002年 / 3-4卷
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D O I：
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中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The emission properties of diamond-like carbon (DLC) and silicon carbide films were investigated. The DLC films were deposited by PE CVD technique and SiC films from separated ion beams. The deposition of the films into silicon tips allows us to improve field emission strongly. The nonmonotonous dependencies of effective work function, threshold voltage and optical band gap n nitrogen content in gas mixture during DLC film, deposition are observed. The model for explanation of observed result is proposed. The emission properties of silicon carbide films doped with rare-earth elements were studied. The strong influence of the SiC film doping with Er and Pr on electron field emission parameters is observed. The shape and the radius curvature of the tips are very important for electron emission.
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页码：87 / 97
页数：11
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