Diode Heterostructures with a Ferromagnetic (Ga,Mn)As Layer

被引：0

作者：

Zvonkov, B. N. ^{[1
]}

Vikhrova, O. V. ^{[1
]}

Danilov, Yu. A. ^{[1
]}

Dorokhin, M. V. ^{[1
]}

Kalentyeva, I. L. ^{[1
]}

Kudrin, A. V. ^{[1
]}

Zdoroveyshchev, A. V. ^{[1
]}

Larionova, E. A. ^{[1
]}

Koval'skii, V. A. ^{[2
]}

Soltanovich, O. A. ^{[2
]}

机构：

[1] Lobachevsky State Univ Nizhny Novgorod, Tech Phys Res Inst, Nizhnii Novgorod 603950, Russia

[2] Russian Acad Sci, Inst Microelect Technol & High Pur Mat, Chernogolovka 142432, Moscow Region, Russia

来源：

PHYSICS OF THE SOLID STATE | 2020年 / 62卷 / 03期

基金：

俄罗斯科学基金会;

关键词：

pulsed laser deposition; diode heterostructure; ferromagnetic semiconductor; negative magnetoresistance; DOPED GAAS; TRANSPORT;

D O I：

10.1134/S1063783420030270

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Diode p-(GaMn)As/n-InGaAs/n(+)-GaAs heterostructures with different thicknesses (from 5 to 50 nm) of the (Ga,Mn)As dilute magnetic semiconductor layer have been fabricated and studied. The negative magnetoresistance effect reaching 6-8% is observed in a magnetic field of 3600 Oe; this effect is retained up to temperatures of 70-80 K and related to a decrease in the charge carrier scattering due to ferromagnetic ordering in the (Ga,Mn)As layer. The dependence of the magnetoresistance on the forward bias voltage is nonmonotonic, and the magnetoresistance maximum and the operating voltage rate are dependent on the (Ga,Mn)As layer thickness. The magnetic-field dependence of the magnetoresistance have a hysteresis shape determined by the influence of the tensile stresses in the (Ga,Mn)As layer grown above the relaxed InGaAs on the magnetization component perpendicular to the structure surface.

引用

页码：423 / 430

页数：8

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