Diode Heterostructures with a Ferromagnetic (Ga,Mn)As Layer

被引：0

作者：

Zvonkov, B. N. ^{[1
]}

Vikhrova, O. V. ^{[1
]}

Danilov, Yu. A. ^{[1
]}

Dorokhin, M. V. ^{[1
]}

Kalentyeva, I. L. ^{[1
]}

Kudrin, A. V. ^{[1
]}

Zdoroveyshchev, A. V. ^{[1
]}

Larionova, E. A. ^{[1
]}

Koval'skii, V. A. ^{[2
]}

Soltanovich, O. A. ^{[2
]}

机构：

[1] Lobachevsky State Univ Nizhny Novgorod, Tech Phys Res Inst, Nizhnii Novgorod 603950, Russia

[2] Russian Acad Sci, Inst Microelect Technol & High Pur Mat, Chernogolovka 142432, Moscow Region, Russia

来源：

PHYSICS OF THE SOLID STATE | 2020年 / 62卷 / 03期

基金：

俄罗斯科学基金会;

关键词：

pulsed laser deposition; diode heterostructure; ferromagnetic semiconductor; negative magnetoresistance; DOPED GAAS; TRANSPORT;

D O I：

10.1134/S1063783420030270

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Diode p-(GaMn)As/n-InGaAs/n(+)-GaAs heterostructures with different thicknesses (from 5 to 50 nm) of the (Ga,Mn)As dilute magnetic semiconductor layer have been fabricated and studied. The negative magnetoresistance effect reaching 6-8% is observed in a magnetic field of 3600 Oe; this effect is retained up to temperatures of 70-80 K and related to a decrease in the charge carrier scattering due to ferromagnetic ordering in the (Ga,Mn)As layer. The dependence of the magnetoresistance on the forward bias voltage is nonmonotonic, and the magnetoresistance maximum and the operating voltage rate are dependent on the (Ga,Mn)As layer thickness. The magnetic-field dependence of the magnetoresistance have a hysteresis shape determined by the influence of the tensile stresses in the (Ga,Mn)As layer grown above the relaxed InGaAs on the magnetization component perpendicular to the structure surface.

引用

页码：423 / 430

页数：8

共 50 条

[11] Coherent spin dynamics of carriers in ferromagnetic semiconductor heterostructures with an Mn δ layer
S. V. Zaitsev
I. A. Akimov
L. Langer
Yu. A. Danilov
M. V. Dorokhin
B. N. Zvonkov
D. R. Yakovlev
M. Bayer
[J]. Journal of Experimental and Theoretical Physics, 2016, 123 : 420 - 428
[12] Independent electronic and magnetic doping in (Ga,Mn)As based digital ferromagnetic heterostructures
Johnston-Halperin, E
Schuller, JA
Gallinat, CS
Kreutz, TC
Myers, RC
Kawakami, RK
Knotz, H
Gossard, AC
Awschalom, DD
[J]. PHYSICAL REVIEW B, 2003, 68 (16):
[13] PREPARATION OF (IN,MN)AS/(GA,AL)SB MAGNETIC SEMICONDUCTOR HETEROSTRUCTURES AND THEIR FERROMAGNETIC CHARACTERISTICS
MUNEKATA, H
ZASLAVSKY, A
FUMAGALLI, P
GAMBINO, RJ
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (21) : 2929 - 2931
[14] Microstructure of (Ga,Mn)As/GaAs digital ferromagnetic heterostructures -: art. no. 094913
Kong, X
Trampert, A
Guo, XX
Kolovos-Vellianitis, D
Däweritz, L
Ploog, KH
[J]. JOURNAL OF APPLIED PHYSICS, 2005, 97 (09)
[15] Dependence of layer thickness on magnetism and electrical conduction in ferromagnetic (In,Mn)As/GaSb heterostructures
Nose, H.
Sugahara, S.
Munekata, H.
[J]. NARROW GAP SEMICONDUCTORS 2007, 2008, 119 : 23 - 26
[16] Domain-wall contribution to magnetoresistance of a ferromagnetic (Ga,Mn)As layer
Wosinski, T.
Figielski, T.
Pelya, O.
Makosa, A.
Morawski, A.
Sadowski, J.
Dobrowolski, W.
Szymczak, R.
Wrobel, J.
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (02): : 472 - 476
[17] Ferromagnetic resonance in (Ga,Mn)As
Rubinstein, M
Hanbicki, A
Lubitz, P
Osofsky, M
Krebs, JJ
Jonker, B
[J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2002, 250 (1-3) : 164 - 169
[18] Study of Heterostructures with a Combined In(Ga)As/GaAs Quantum Dot/Quantum Well Layer and a Mn δ Layer
Pavlova, E. D.
Gorshkov, A. P.
Bobrov, A. I.
Malekhonova, N. V.
Zvonkov, B. N.
[J]. SEMICONDUCTORS, 2013, 47 (12) : 1591 - 1594
[19] Study of heterostructures with a combined In(Ga)As/GaAs quantum dot/quantum well layer and a Mn δ layer
E. D. Pavlova
A. P. Gorshkov
A. I. Bobrov
N. V. Malekhonova
B. N. Zvonkov
[J]. Semiconductors, 2013, 47 : 1591 - 1594
[20] Epitaxial lift-off of ferromagnetic (Ga,Mn) As nanoflakes for van der Waals heterostructures
Gang Xiang
[J]. Journal of Semiconductors, 2019, (08) : 5 - 6

← 1 2 3 4 5 →