A critical analysis of investigation of deep levels in high-resistivity CdS single crystals by photoelectric transient spectroscopy

被引：12

作者：

Odrinskii, AP ^{[1
]}

机构：

[1] Byelarussian Acad Sci, Inst Tech Acoust, Vitebsk 210717, BELARUS

来源：

SEMICONDUCTORS | 2004年 / 38卷 / 03期

关键词：

Spectroscopy; Computer Simulation; Magnetic Material; Critical Analysis; Electromagnetism;

D O I：

10.1134/1.1682331

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The investigation of high-resistivity CdS single crystals by photoelectric deep-level transient spectroscopy (PEDLTS) is discussed. Computer simulation of the experiment is carried out. This simulation enables us to compare the results obtained by the PEDLTS and thermally stimulated conductivity methods. The experimental potentials of these methods are compared. (C) 2004 MAIK "Nauka/Interperiodica".

引用

页码：298 / 303

页数：6

共 50 条

[31] GROWTH OF THIN BISMUTH SINGLE-CRYSTALS WITH HIGH-RESISTIVITY RATIOS
SIMA, V
VASEK, P
LEJCEK, P
KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1978, 13 (03): : K36 - K37
[32] ENERGY POSITIONS OF DEEP LEVELS IN HIGH-RESISTIVITY INAS-CR
BALAGUROV, LA
OMELYANOVSKII, EM
FISTUL, VI
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (12): : 1404 - 1405
[33] Study on Te atmosphere annealing of high-resistivity CdZnTe:In single crystals
Yu, Pengfei
Jie, Wanqi
JOURNAL OF CRYSTAL GROWTH, 2013, 383 : 126 - 130
[34] Synthesis of high purity SiC powder for high-resistivity SiC single crystals growth
State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
J Mater Sci Technol, 2007, 1 (118-122):
[35] Synthesis of high purity SiC powder for high-resistivity SiC single crystals growth
Wang, Li
Hu, Xiaobu
Xu, Xiangang
Jiang, Shouzheng
Ning, Lina
Jiang, Minhua
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2007, 23 (01) : 118 - 122
[36] COMPARISON OF THE PARAMETERS OF DEEP CENTERS IN HIGH-RESISTIVITY SEMICONDUCTORS INVESTIGATED BY THE METHOD OF PHOTOELECTRIC RELAXATION SPECTROSCOPY USING THE TEMPERATURE AND FREQUENCY SCANNING VARIANTS
OMELYANOVSKII, EM
POLYAKOV, AY
TISHKIN, MV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (04): : 456 - 457
[37] Synthesis of High Purity SiC Powder for High-resistivity SiC Single Crystals Growth
Li WANG
JournalofMaterialsScience&Technology, 2007, (01) : 120 - 124
[38] PROBLEM OF BAND SCHEME OF ACCIDENTALLY DOPED HIGH-RESISTIVITY SIC SINGLE CRYSTALS
LISITSA, MP
KRASNOV, YS
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (04): : 441 - &
[39] DEEP LEVEL TRANSIENT SPECTROSCOPY OF ELECTRON TRAPS AND SENSITIZING CENTERS IN UNDOPED CDS SINGLE-CRYSTALS
HUSSEIN, M
LLETI, G
SAGNES, G
BASTIDE, G
ROUZEYRE, M
JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) : 261 - 268
[40] PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY FOR HIGH-RESISTIVITY NEUTRON-TRANSMUTATION-DOPED SILICON
TOKUDA, Y
USAMI, A
INOUE, Y
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (05) : 251 - 254

← 1 2 3 4 5 →