A critical analysis of investigation of deep levels in high-resistivity CdS single crystals by photoelectric transient spectroscopy

被引：12

作者：

Odrinskii, AP ^{[1
]}

机构：

[1] Byelarussian Acad Sci, Inst Tech Acoust, Vitebsk 210717, BELARUS

来源：

SEMICONDUCTORS | 2004年 / 38卷 / 03期

关键词：

Spectroscopy; Computer Simulation; Magnetic Material; Critical Analysis; Electromagnetism;

D O I：

10.1134/1.1682331

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The investigation of high-resistivity CdS single crystals by photoelectric deep-level transient spectroscopy (PEDLTS) is discussed. Computer simulation of the experiment is carried out. This simulation enables us to compare the results obtained by the PEDLTS and thermally stimulated conductivity methods. The experimental potentials of these methods are compared. (C) 2004 MAIK "Nauka/Interperiodica".

引用

页码：298 / 303

页数：6

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