Orientation dependence of resistivity in anisotropic ceramic composites

被引:0
|
作者
Mebane, DS [1 ]
Gerhardt, RA [1 ]
机构
[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
来源
CERAMIC MATERIALS AND MULTILAYER ELECTRONIC DEVICES | 2003年 / 150卷
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Anisotropic ceramic composites, composed of an alumina matrix containing various ratios of silicon carbide whisker inclusions, were measured using impedance spectroscopy and pole figure analysis. The impedance spectra were found to contain two semicircles: one at high frequencies, corresponding to bulk impedance phenomena; and one at low frequencies, corresponding to interfacial phenomena. The bulk resistivity of samples measured parallel to the hot-pressing direction showed a dramatic decrease in resistivity at a volume fraction of 8-10% SiCw. The degree of sample anisotropy, as measured by taking bulk resistivity values parallel and perpendicular to the hot-pressing direction, was found to increase as SiCw volume fraction decreased towards the percolation threshold. The electrical property anisotropy was confirmed by texture analysis. Pole figure data for composites containing 10 and 20% volume fraction SiCw showed fairly consistent whisker orientation distributions for both measured orientations.
引用
收藏
页码:265 / 272
页数:8
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