Observation of reduced nonradiative current in 1.3-μm AlGaInAs-InP strained MQW lasers

被引：29
|
作者：
Higashi, T [1 ]
Sweeney, SJ
Phillips, AF
Adams, AR
O'Reilly, EP
Uchida, T
Fujii, T
机构：
[1] Univ Surrey, Dept Phys, Guildford GU2 5XH, Surrey, England
[2] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1999年 / 11卷 / 04期
关键词：
laser thermal factor; quantum-well laser; semiconductor laser; spontaneous emission; temperature;
D O I：
10.1109/68.752531
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigated experimentally the temperature dependence of the threshold current in 1.3-mu m AlGaInAs-InP strained multiple-quantum-well lasers, We find that radiative recombination constitutes almost 100% of the threshold current up to 220 K and remains more than 70% even at 300 K, This results in a high characteristic temperature T-0.
引用
收藏
页码：409 / 411
页数：3
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