Analysis of HCS in STI-based LDMOS transistors

被引：14

作者：

Reggiani, Susanna ^{[1
]}

Poli, Stefano ^{[1
]}

Gnani, Elena ^{[1
]}

Gnudi, Antonio ^{[1
]}

Baccarani, Giorgio ^{[1
]}

Denison, Marie ^{[2
]}

Pendharkar, Sameer ^{[2
]}

Wise, Rick ^{[2
]}

Seetharaman, Sridhar ^{[2
]}

机构：

[1] Univ Bologna, ARCES, Dept Elect, Bologna, Italy

[2] Texas Instruments Inc, Dallas, TX USA

来源：

2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2010年

关键词：

TCAD analysis; LDMOS; Hot-carrier stress; MOS-TRANSISTORS; RUGGED LDMOS;

D O I：

10.1109/IRPS.2010.5488712

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A numerical investigation of the hot-carrier behavior of a lateral DMOS transistor with shallow trench isolation (STI) is carried out. The measured drain-current degradation induced by hot-carrier stress (HCS) is nicely reproduced by TCAD results revealing that interface traps are mainly formed at the STI corner close to the channel. The effect of typical device design variations on hot-carrier degradation is analyzed.

引用

页码：881 / 886

页数：6

共 50 条

[1] TCAD Predictions of Linear and Saturation HCS Degradation in STI-based LDMOS Transistors Stressed in the Impact-Ionization Regime
Reggiani, S.
Barone, G.
Gnani, E.
Gnudi, A.
Baccarani, G.
Poli, S.
Chuang, M. -Y.
Tian, W.
Wise, R.
2013 25TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2013, : 375 - 378
[2] Influence of Design Considerations on Hot Carrier Injection Degradation of STI-based LDMOS Transistors
Alimin, A. F. M.
Hatta, S. F. W. M.
Soin, N.
2018 25TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA), 2018,
[3] Linear Drain Current Degradation of STI-based LDMOS Transistors under AC Stress Conditions
Reggiani, S.
Monti, F.
Barone, G.
Gnani, E.
Gnudi, A.
Baccarani, G.
Poli, S.
Chuang, M. -Y.
Tian, W.
Wise, R.
2014 IEEE 26TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD), 2014, : 193 - 196
[4] Physics-Based Analytical Model for HCS Degradation in STI-LDMOS Transistors
Reggiani, Susanna
Poli, Stefano
Denison, Marie
Gnani, Elena
Gnudi, Antonio
Baccarani, Giorgio
Pendharkar, Sameer
Wise, Rick
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (09) : 3072 - 3080
[5] The Influence of Shallow Trench Isolation Angle on Hot Carrier Effect of STI-Based LDMOS Transistors
Alimin, A. F. M.
Hizamul-din, H. H.
Hatta, S. F. W. M.
Soin, N.
PROCEEDINGS OF THE 2017 IEEE REGIONAL SYMPOSIUM ON MICRO AND NANOELECTRONICS (RSM), 2017, : 248 - 251
[6] Temperature Dependence of the Threshold Voltage Shift Induced by Carrier Injection in Integrated STI-Based LDMOS Transistors
Poli, Stefano
Reggiani, Susanna
Denison, Marie
Gnani, Elena
Gnudi, Antonio
Baccarani, Giorgio
Pendharkar, Sameer
Wise, Rick
IEEE ELECTRON DEVICE LETTERS, 2011, 32 (06) : 791 - 793
[7] Investigation on the temperature dependence of the HCI effects in the rugged STI-based LDMOS transistor
Poli, S.
Reggiani, S.
Baccarani, G.
Gnani, E.
Gnudi, A.
Denison, M.
Pendharkar, S.
Wise, R.
Seetharaman, S.
2010 22ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2010, : 311 - 314
[8] Full Understanding of Hot-Carrier-Induced Degradation in STI-based LDMOS transistors in the Impact-Ionization Operating Regime
Poli, S.
Reggiani, S.
Baccarani, G.
Gnani, E.
Gnudi, A.
Denison, M.
Pendharkar, S.
Wise, R.
2011 IEEE 23RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2011, : 152 - 155
[9] Hot-Carrier Degradation in Power LDMOS: Selective LOCOS- Versus STI-Based Architecture
Tallarico, Andrea Natale
Reggiani, Susanna
Depetro, Riccardo
Torti, Andrea Mario
Croce, Giuseppe
Sangiorgi, Enrico
Fiegna, Claudio
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2018, 6 (01): : 219 - 226
[10] NBTI degradation in STI-based LDMOSFETs
He, Yandong
Zhang, Ganggang
Zhang, Xing
MICROELECTRONICS RELIABILITY, 2014, 54 (9-10) : 1940 - 1943

← 1 2 3 4 5 →