Electrodeposition and Growth Mechanism of Nanotwinned Copper in High Aspect-Ratio via Structures

被引:5
|
作者
Chen, Hsin-Yu [1 ]
Huang, Yan-Syun [1 ]
Liao, Chien-Neng [1 ]
机构
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30013, Taiwan
关键词
pulse electrodeposition; twin structure; textured growth; copper interconnects; CU NANOWIRES; CUPROUS ION; DIFFUSION; TEXTURE; NANOCRYSTALLINE; ORIENTATION; DEPOSITION; STRESS; FILMS; NI;
D O I
10.1149/1945-7111/ac2d13
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Despite nanotwinned copper (nt-Cu) having many fascinating physical/chemical properties, controlling twin density and orientation in the electrodeposited nt-Cu remains challenging, especially for high aspect-ratio Cu vias. Here, an array of nt-Cu nanowires (aspect ratio > 150) with dense coherent twin boundaries (CTBs) perpendicular to the length direction were deposited in porous anodic aluminium oxide vias by pulse electrodeposition. By changing pulse on/off duration, we control the degree of (111) growth texture and twinning structure of the nt-Cu nanowires. It was found that a small anodic current in the pulse-off period enhances (111) crystal texture and CTB formation probability during the bottom-up filling process. We propose that nanoscale twinning is activated by facet-dependent crystal growth and stress accumulation/relaxation behavior during pulse deposition. This study shall enable the implementation of high aspect-ratio nt-Cu interconnects in nanoelectronic devices and nanoelectromechanical systems. (c) 2021 The Electrochemical Society ("ECS"). Published on behalf of ECS by IOP Publishing Limited.
引用
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页数:5
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