Evaluation of the Radiation Resistance of GaAs-based Solar Cells

被引:2
|
作者
Espinet-Gonzalez, Pilar [1 ]
Jahelka, Phillip [1 ]
Anjum, Sara [1 ]
Kelzenberg, Michael D. [1 ]
Atwater, Harry A. [1 ]
机构
[1] CALTECH, Pasadena, CA 91125 USA
关键词
D O I
10.1109/PVSC43889.2021.9519051
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Next generation space solar cells are required to be efficient, light and low cost. In order to GaAs-based devices keep playing a significant role in space the radiation performance needs to be increased to eliminate the required shielding and the cost needs to be dramatically reduced. GaAs nanophotonic structures have the potential to fulfill both requirements. In order to evaluate the radiation performance of different GaAs architectures a simulation platform has been developed and corroborated with experimental data reported in the literature. Exemplary cases of the irradiation-induced degradation in planar and nanowire architectures are presented.
引用
收藏
页码:2160 / 2162
页数:3
相关论文
共 50 条
  • [1] Radiation resistance of MBE-grown GaInP/GaAs-based solar cells
    Kazantsev, AB
    Lammasniemi, J
    Jaakkola, R
    Rajatora, M
    Rauhala, E
    Raisanen, J
    Jain, RK
    Pessa, M
    [J]. PROGRESS IN PHOTOVOLTAICS, 1998, 6 (01): : 25 - 33
  • [2] VISUAL EVALUATION OF DEFECTS IN GAAS-BASED SOLAR-CELLS
    SPRINGTHORPE, AJ
    GARELJONES, PM
    [J]. APPLIED OPTICS, 1978, 17 (18): : 2857 - 2865
  • [3] The recombination and tunnel current in GaAs-based solar cells: Effect of radiation
    Kalinovsky, VS
    Andreev, VM
    Evstropov, VV
    Khvostikov, VP
    Lantratov, VM
    [J]. PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C, 2003, : 765 - 768
  • [4] Contact Problems in GaAs-based Solar Cells
    Urmos, Antal
    Farkas, Zoltan
    Dobos, Laszlo
    Nagy, Szilvia
    Nemcsics, Akos
    [J]. ACTA POLYTECHNICA HUNGARICA, 2018, 15 (06) : 99 - 124
  • [5] InGaP/GaAs-based multijunction solar cells
    Takamoto, T
    Kaneiwa, M
    Imaizumi, M
    Yamaguchi, M
    [J]. PROGRESS IN PHOTOVOLTAICS, 2005, 13 (06): : 495 - 511
  • [6] Resistance to edge recombination in GaAs-based dots-in-a-well solar cells
    Gu, Tingyi
    El-Emawy, Mohamed A.
    Yang, Kai
    Stintz, Andreas
    Lester, Luke F.
    [J]. APPLIED PHYSICS LETTERS, 2009, 95 (26)
  • [7] EFFECT OF PROTON RADIATION ON THE PERFORMANCE OF GaAs-BASED SOLAR CELL
    Zaoui, O.
    Dahbi, N.
    Ayat, L.
    [J]. JOURNAL OF OVONIC RESEARCH, 2020, 16 (01): : 29 - 34
  • [8] GaAs-Based Quantum Well Solar Cells for Defense Applications
    Welser, Roger E.
    Sood, Ashok K.
    Puri, Yash R.
    Laboutin, Oleg A.
    Dhar, Nibir K.
    Wijewarnasuriya, Priyalal S.
    [J]. ENERGY HARVESTING AND STORAGE: MATERIALS, DEVICES, AND APPLICATIONS, 2010, 7683
  • [9] ANALYSIS OF STRAIN COMPENSATED GaAs-BASED In As QD SOLAR CELLS
    Cress, Cory D.
    Hubbard, Seth M.
    Maximenko, Serguei I.
    Bailey, Chris G.
    Forbes, David V.
    Raffaelle, Ryne P.
    Twigg, Mark E.
    Walters, Robert J.
    [J]. 2009 34TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-3, 2009, : 1222 - +
  • [10] DBL model for GaAs-based solar cells in different outdoor conditions
    Mohammadnejad, S.
    Abkenar, Nima Jouyandeh
    Bahrami, A.
    [J]. INDIAN JOURNAL OF PHYSICS, 2013, 87 (10) : 971 - 976