Contact Problems in GaAs-based Solar Cells

被引：1

作者：

Urmos, Antal ^{[1
]}

Farkas, Zoltan ^{[1
]}

Dobos, Laszlo ^{[2
]}

Nagy, Szilvia ^{[3
]}

Nemcsics, Akos ^{[1
,2
]}

机构：

[1] Obuda Univ, Inst Microelect & Technol, Tavaszmezo Utca 17, H-1084 Budapest, Hungary

[2] Inst Tech Phys & Mat Sci, Ctr Energy Res, Konkoly Thege M Ut 29-33, H-1121 Budapest, Hungary

[3] Szechenyi Istvan Univ, Dept Infocommun, Egyet Ter 1, H-9026 Gyor, Hungary

来源：

ACTA POLYTECHNICA HUNGARICA | 2018年 / 15卷 / 06期

关键词：

solar cell; ohmic contacts; surface pattern; fractal dimension; structural entropy; AU-GE-NI; NONGOLD OHMIC CONTACTS; METALLIZATION; BEHAVIOR; SURFACE; INP; RESISTANCE; CLASSIFICATION; FABRICATION; SIMULATION;

D O I：

10.12700/APH.15.6.2018.6.6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The present work deals with contact problems of GaAs-based solar cells. In the introduction the most basic GaAs-based solar cell structures are introduced. Then, the energy and electronic properties are investigated. In the third part of this publication, the technological aspects of the metallization are discussed. Here the surface patterns are investigated, that are formed at the surface of the Au/GaAs and Au/TiN/GaAs material systems, as the effect of the annealing process. The further aim of these investigations to investigate, how the properties of ohmic contact depends on the properties of the material system. If these relations are known, the relationships between different morphologies and their electric qualities will be also known.

引用

页码：99 / 124

页数：26

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