The evolution of the morphology of Ge nanocrystals formed by ion implantation in SiO2

被引：4

作者：

Desnica, UV

Dubcek, P

Salamon, K

Desnica-Frankovic, ID

Buljan, M

Bernstoff, S

Serincan, U

Turan, R

机构：

[1] Rudjer Boskovic Inst, Dept Phys, HR-10000 Zagreb, Croatia

[2] Univ Zagreb, Inst Phys, Zagreb, Croatia

[3] Sincrotrone Trieste, Basovizza, Italy

[4] Middle E Tech Univ, TR-06531 Ankara, Turkey

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2005年 / 238卷 / 1-4期

关键词：

nanocrystals; quantum dots; X-ray scattering; GISAXS; implantation; Ge;

D O I：

10.1016/j.nimb.2005.06.062

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Grazing incidence small angle X-ray scattering was applied to study the synthesis and growth of Ge quantum dots in Ge-implanted SiO2. Ge ion doses were up to 10(17)/cm(2), and subsequent annealing temperatures up to T-a = 1000 degrees C. Results suggest that ordered and correlated Ge QDs can be achieved by high-dose implantation followed by medium-T annealing. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：272 / 275

页数：4

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