The evolution of the morphology of Ge nanocrystals formed by ion implantation in SiO2

被引：4
|
作者：
Desnica, UV
Dubcek, P
Salamon, K
Desnica-Frankovic, ID
Buljan, M
Bernstoff, S
Serincan, U
Turan, R
机构：
[1] Rudjer Boskovic Inst, Dept Phys, HR-10000 Zagreb, Croatia
[2] Univ Zagreb, Inst Phys, Zagreb, Croatia
[3] Sincrotrone Trieste, Basovizza, Italy
[4] Middle E Tech Univ, TR-06531 Ankara, Turkey
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2005年 / 238卷 / 1-4期
关键词：
nanocrystals; quantum dots; X-ray scattering; GISAXS; implantation; Ge;
D O I：
10.1016/j.nimb.2005.06.062
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Grazing incidence small angle X-ray scattering was applied to study the synthesis and growth of Ge quantum dots in Ge-implanted SiO2. Ge ion doses were up to 10(17)/cm(2), and subsequent annealing temperatures up to T-a = 1000 degrees C. Results suggest that ordered and correlated Ge QDs can be achieved by high-dose implantation followed by medium-T annealing. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：272 / 275
页数：4
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