Spatially resolved photoluminescence in partially ordered GaInP2

被引:20
|
作者
Smith, S [1 ]
Cheong, HM [1 ]
Fluegel, BD [1 ]
Geisz, JF [1 ]
Olson, JM [1 ]
Kazmerski, LL [1 ]
Mascarenhas, A [1 ]
机构
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
关键词
D O I
10.1063/1.123189
中图分类号
O59 [应用物理学];
学科分类号
摘要
Scanning confocal microscopy combined with high-resolution spectroscopy is used to probe the spatial variations in the low-temperature (5.0 K) photoluminescence (PL) of partially ordered GaInP2 with a spatial resolution of 0.7 mu m. We observe large regions (1-2 mu m) wherein the excitonic PL is suppressed up to a factor of four ("defect- rich" regions) when compared to unaffected areas. These defect-rich regions show a commensurate enhancement in the lower energy below gap emission. The spatial extent of this effect is inconsistent with the picture that the low-energy emission originates solely at the antiphase boundaries of the ordered domains and therefore must originate from other defects within the ordered domain as well. (C) 1999 American Institute of Physics. [S0003-6951(99)02005-7].
引用
收藏
页码:706 / 708
页数:3
相关论文
共 50 条
  • [21] Resonant Raman scattering in spontaneously ordered GaInP2
    Cheong, HM
    Mascarenhas, A
    Geisz, JF
    Olson, JM
    PHYSICAL REVIEW B, 2000, 62 (03): : 1536 - 1539
  • [22] Pressure dependence of photoluminescence in GaAs/partially ordered GaInP interface
    Kobayashi, T
    Ohmae, T
    Uchida, K
    Nakahara, J
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (2B): : 1004 - 1007
  • [23] Pressure dependence of photoluminescence in GaAs/partially ordered GaInP interface
    Kobayashi, Toshihiko
    Ohmae, Takashi
    Uchida, Kazuo
    Nakahara, Jun-Ichiro
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (2 B): : 1004 - 1007
  • [24] Polarization-angle dependence of photoluminescence intensity of ordered GaInP2 layers:: observation of polarization memory
    Prutskij, T.
    Pelosi, C.
    Brito-Orta, R.
    CRYSTAL RESEARCH AND TECHNOLOGY, 2008, 43 (09) : 975 - 979
  • [25] Influence of domain size on optical properties of ordered GaInP2
    Ernst, P
    Geng, C
    Hahn, G
    Scholz, F
    Schweizer, H
    Phillipp, F
    Mascarenhas, A
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (05) : 2633 - 2639
  • [26] Electronic structure of "sequence mutations" in ordered GaInP2 alloys
    Mattila, T
    Wei, SH
    Zunger, A
    PHYSICAL REVIEW LETTERS, 1999, 83 (10) : 2010 - 2013
  • [27] Far-infrared reflection studies in ordered GaInP2
    Alsina, F
    Cheong, HM
    Webb, JD
    Mascarenhas, A
    Geisz, JF
    Olson, JM
    PHYSICAL REVIEW B, 1997, 56 (20): : 13126 - 13131
  • [28] Dark-field spectroscopy on spontaneously ordered GaInP2
    Rheinlander, B
    Schubert, M
    Gottschalch, V
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1995, 152 (01): : 287 - 292
  • [29] EVIDENCE FOR PYROELECTRICITY IN SINGLE VARIANT SPONTANEOUSLY ORDERED GAINP2
    ALONSO, RG
    MASCARENHAS, A
    HORNER, GS
    SINHA, K
    ZHU, J
    FRIEDMAN, DJ
    BERTNESS, KA
    OLSON, JM
    SOLID STATE COMMUNICATIONS, 1993, 88 (05) : 341 - 344
  • [30] Raman scattering in single-variant spontaneously ordered GaInP2
    Alsina, F
    Mestres, N
    Pascual, J
    Geng, C
    Ernst, P
    Scholz, F
    PHYSICAL REVIEW B, 1996, 53 (19): : 12994 - 13001