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- [1] Pressure dependence of photoluminescence in GaAs/partially ordered GaInP interface JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (2B): : 1004 - 1007
- [2] Pressure dependence of photoluminescence in GaAs ordered GaInP interface 1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS, 1998, : 389 - 392
- [3] High pressure photoluminescence study of the GaAs/partially ordered GaInP interface PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2001, 223 (01): : 123 - 128
- [4] A study of the GaAs/partially ordered GaInP interface PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 473 - 474
- [5] Time-resolved photoluminescence study of GaAs ordered GaInP interface under high pressure PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1999, 211 (01): : 247 - 253
- [8] A study of band alignment in GaAs/GaInP(partially ordered) heterostructures with high pressure HIGH-PRESSURE MATERIALS RESEARCH, 1998, 499 : 381 - 392
- [9] Recombination mechanism of anti-Stokes photoluminescence in partially ordered GaInP-GaAs heterostructure PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 595 - 596