Pressure dependence of photoluminescence in GaAs/partially ordered GaInP interface

被引:0
|
作者
Kobayashi, Toshihiko [3 ]
Ohmae, Takashi [3 ]
Uchida, Kazuo [1 ]
Nakahara, Jun-Ichiro [2 ]
机构
[1] Dept. of Communications and Systems, University of Electro-Communications, Chofu 182-8585, Japan
[2] Division of Physics, Graduate School of Science, Hokkaido University, Sapporo 060-0810, Japan
[3] Dept. of Elec. and Electronics Eng., Kobe University, Kobe 657-8501, Japan
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:1004 / 1007
相关论文
共 50 条
  • [31] The formation of radiative defects at GaAs/GaInP interface
    Uchida, K
    Arai, T
    Matsumoto, K
    OPTOELECTRONIC MATERIALS: ORDERING, COMPOSITION MODULATION, AND SELF-ASSEMBLED STRUCTURES, 1996, 417 : 319 - 324
  • [32] High pressure studies of quantum well emission and deep emission in GaInP(ordered)-GaAs heterostructures
    Kwok, SH
    Yu, PY
    Uchida, K
    Arai, T
    HIGH-PRESSURE MATERIALS RESEARCH, 1998, 499 : 195 - 200
  • [33] Deep emission band at GaInP/GaAs interface
    Uchida, Kazuo
    Arai, Takayuki
    Matsumoto, Koh
    Journal of Applied Physics, 1997, 81 (02):
  • [34] Peep emission band at GaInP/GaAs interface
    Uchida, K
    Arai, T
    Matsumoto, K
    JOURNAL OF APPLIED PHYSICS, 1997, 81 (02) : 771 - 776
  • [35] Analysis of temperature behavior of polarized photoluminescence in ordered GaInP layer
    Prutskij, T.
    Pelosi, C.
    Brito-Orta, R. A.
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (01)
  • [36] PRESSURE-DEPENDENCE AND THERMAL QUENCHING OF CHROMIUM PHOTOLUMINESCENCE IN ORDERED PEROVSKITES
    BARTRAM, RH
    DOLAN, JF
    CHARPIE, JC
    RINZLER, AG
    KAPPERS, LA
    CRYSTAL LATTICE DEFECTS AND AMORPHOUS MATERIALS, 1987, 15 (1-4): : 165 - 169
  • [37] QUANTUM STATISTICS OF POLARIZED PHOTOLUMINESCENCE IN ORDERED GAINP2
    MASCARENHAS, A
    OLSON, JM
    PHYSICAL REVIEW B, 1990, 41 (14): : 9947 - 9952
  • [38] Polarization-angle dependence of photoluminescence intensity of ordered GaInP2 layers:: observation of polarization memory
    Prutskij, T.
    Pelosi, C.
    Brito-Orta, R.
    CRYSTAL RESEARCH AND TECHNOLOGY, 2008, 43 (09) : 975 - 979
  • [39] Temperature dependence of InP/GaInP quantum dot photoluminescence
    Beirne, GJ
    Farrell, IL
    Grogan, CM
    Connolly, JO
    O'Connor, GM
    Glynn, TJ
    Thomas, KK
    Lambkin, JD
    MICROELECTRONIC ENGINEERING, 2000, 51-2 : 73 - 78
  • [40] Highly efficient luminescence in partially ordered GaInP2
    Zhang, XH
    Chua, SJ
    Dong, JR
    PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 222 - 223