High optical-gain AlGaN/GaN 2 dimensional electron gas photodetectors

被引：31
|
作者：
Kuan, TM [1 ]
Chang, SJ
Su, YK
Chih-Hsin, K
Webb, JB
Bardwell, JA
Liu, Y
Tang, HP
Lin, WJ
Cherng, YT
Lan, WH
机构：
[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan
[3] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
[4] Chung Shan Inst Sci & Technol, Mat R&D Ctr, Taoyuan 325, Taiwan
[5] Natl Univ Kaohsiung, Dept Elect Engn, Kaohsiung 811, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2003年 / 42卷 / 9A期
关键词：
GaN; MOVPE; 2DEG; photodetector;
D O I：
10.1143/JJAP.42.5563
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Nitride-based AlGaN/GaN heterostructure two dimensional electron gas (2DEG) photodetectors have been successfully fabricated. By using such an AlGaN/GaN heterostructure, we could significantly reduce the recombination of photogenerated carriers and thus achieve an extremely high photodetector responsiveness. At an incident light wavelength of 240 nm, it was found that the responsiveness could reach 5.2 x 10(9) A/W.
引用
收藏
页码：5563 / 5564
页数：2
相关论文
共 50 条
  • [1] High gain ultraviolet photodetectors based on AlGaN/GaN heterostructures for optical switching
    Martens, M.
    Schlegel, J.
    Vogt, P.
    Brunner, F.
    Lossy, R.
    Wuerfl, J.
    Weyers, M.
    Kneissl, M.
    [J]. APPLIED PHYSICS LETTERS, 2011, 98 (21)
  • [2] Optical and electrical properties of 2-dimensional electron gas in GaN/AlGaN heterostructures
    Alause, H
    Knap, W
    Azema, SC
    Bluet, JM
    Sadowski, ML
    Huant, S
    Young, J
    Khan, MA
    Chen, Q
    Shur, M
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 46 (1-3): : 79 - 83
  • [3] Optical investigations of two dimensional electron gas in the AlGaN/GaN heterostructures
    Kudrawiec, R
    Syperek, M
    Misiewici, J
    Pasaiewiez, R
    Paszkiewicz, B
    Tlaczala, M
    Strupinski, W
    [J]. E-MRS 2003 FALL MEETING, SYMPOSIA A AND C, PROCEEDINGS, 2004, 1 (02): : 378 - 381
  • [4] Polar optical phonon scattering of two-dimensional electron gas in AlGaN/GaN high electron mobility transistor
    Zhang Xue-Bing
    Liu Nai-Zhang
    Yao Ruo-He
    [J]. ACTA PHYSICA SINICA, 2020, 69 (15)
  • [5] Optical properties related to a two-dimensional electron gas at an AlGaN/GaN heterostructure
    Park, YS
    Na, JH
    Lee, HS
    Kim, HJ
    Park, CM
    Choi, SW
    Fu, DJ
    Kang, TW
    Oh, JE
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 43 (05) : 743 - 746
  • [6] Optical investigation of an AlGaN/GaN interface with the presence of a two-dimensional electron gas
    Lin, D. Y.
    Wu, J. D.
    Hung, C. C.
    Lu, C. T.
    Huang, Y. S.
    Liang, C. -T.
    Chen, N. C.
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2010, 43 (01): : 125 - 129
  • [7] Two-dimensional electron gas in AlGaN/GaN heterostructures
    Li, JZ
    Lin, JY
    Jiang, HX
    Khan, MA
    Chen, Q
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (04): : 1117 - 1120
  • [8] AlGaN/GaN two-dimensional electron gas metal-insulator-semiconductor photodetectors with sputtered SiO2 layers
    Chang, P. C.
    Lam, K. T.
    Chen, C. H.
    Chang, S. J.
    Yu, C. L.
    Liu, C. H.
    [J]. IET OPTOELECTRONICS, 2008, 2 (01) : 55 - 57
  • [9] The role of the AlGaAs doping level on the optical gain of two-dimensional electron gas photodetectors
    Nabet, B
    Romero, MA
    Cola, A
    Quaranta, F
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2004, 33 (02) : 123 - 127
  • [10] The role of the AlGaAs doping level on the optical gain of two-dimensional electron gas photodetectors
    Bahram Nabet
    Murilo A. Romero
    Adriano Cola
    Fabio Quaranta
    [J]. Journal of Electronic Materials, 2004, 33 : 123 - 127
12345