High optical-gain AlGaN/GaN 2 dimensional electron gas photodetectors

被引：31

作者：

Kuan, TM ^{[1
]}

Chang, SJ

Su, YK

Chih-Hsin, K

Webb, JB

Bardwell, JA

Liu, Y

Tang, HP

Lin, WJ

Cherng, YT

Lan, WH

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

[4] Chung Shan Inst Sci & Technol, Mat R&D Ctr, Taoyuan 325, Taiwan

[5] Natl Univ Kaohsiung, Dept Elect Engn, Kaohsiung 811, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2003年 / 42卷 / 9A期

关键词：

GaN; MOVPE; 2DEG; photodetector;

D O I：

10.1143/JJAP.42.5563

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nitride-based AlGaN/GaN heterostructure two dimensional electron gas (2DEG) photodetectors have been successfully fabricated. By using such an AlGaN/GaN heterostructure, we could significantly reduce the recombination of photogenerated carriers and thus achieve an extremely high photodetector responsiveness. At an incident light wavelength of 240 nm, it was found that the responsiveness could reach 5.2 x 10(9) A/W.

引用

页码：5563 / 5564

页数：2

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