Fabrication of nano-patterned sapphire substrates and their application to the improvement of the performance of GaN-based LEDs

被引：21

作者：

Gao, Haiyong ^{[1
]}

Yan, Fawang ^{[1
]}

Zhang, Yang ^{[1
]}

Li, Jinmin ^{[1
]}

Zeng, Yiping ^{[1
]}

Wang, Guohong ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2008年 / 41卷 / 11期

关键词：

D O I：

10.1088/0022-3727/41/11/115106

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nano-patterned sapphire substrates (NPSSs) were fabricated by a chemical wet etching technology using nano-sized SiO(2) as masks. The NPSS was applied to improve the performance of GaN-based light emitting diodes (LEDs). GaN-based LEDs on NPSSs were grown by metal organic chemical vapour deposition. The characteristics of LEDs grown on NPSSs and conventional planar sapphire substrates were studied. The light output powers of the LEDs fabricated on NPSSs were considerably enhanced compared with that of the conventional LEDs grown on planar sapphire substrates.

引用

页数：5

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