Growth of nonpolar a-plane GaN on nano-patterned r-plane sapphire substrates

被引：20

作者：

Gao, Haiyong ^{[1
]}

Yan, Fawang ^{[1
]}

Zhang, Yang ^{[1
]}

Li, Jinmin ^{[1
]}

Zeng, Yiping ^{[1
]}

Wang, Junxi ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Semicond Lighting Res & Dev Ctr, Beijing 100083, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2009年 / 255卷 / 06期

关键词：

GaN; Nonpolar; MOCVD; Nano-patterned; EPITAXIAL LATERAL OVERGROWTH; OPTICAL-PROPERTIES; POLARIZATION; FILMS;

D O I：

10.1016/j.apsusc.2008.10.018

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Sapphire substrates were nano-patterned by inductive coupled plasma etching process. Nonpolar a-plane GaN films were grown on planar and nano-patterned r-plane sapphire substrates by metal organic chemical vapor deposition. The anisotropic characteristic and the crystalline quality of the a-plane GaN films were studied through XRD rocking curves. The cross section and surface morphologies of the a-plane GaN films were studied using SEM and AFM measurements, respectively. The crystal quality and surface flatness of the nonpolar a-plane GaN were greatly improved through the usage of the nano-patterned r-plane sapphire substrates. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：3664 / 3668

页数：5

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