Cyclotron resonance of InAs self-organized quantum dots

被引：0
|
作者：
Nagamune, Y [1 ]
Noda, T [1 ]
Kim, H [1 ]
Sakaki, H [1 ]
机构：
[1] Univ Tokyo, Inst Ind Sci, Minato Ku, Tokyo 1068558, Japan
来源：
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the cyclotron resonance on heavily doped InAs self-organized quantum dot systems. We found polaron pinning effect in cyclotron absorption of the InAs dots around 20 meV, and estimate the coupling constant to be 0.07. From the whole magnetic field dependence, we estimate effective mass of electrons in the dots to be 0.027 m(0).
引用
下载
收藏
页码：1153 / 1154
页数：2
相关论文
共 50 条
  • [41] Photovoltage and photoreflectance spectroscopy of InAs/GaAs self-organized quantum dots
    Sun, BQ
    Lu, ZD
    Jiang, DS
    Wu, JQ
    Xu, ZY
    Wang, YQ
    Wang, JN
    Ge, WK
    APPLIED PHYSICS LETTERS, 1998, 73 (18) : 2657 - 2659
  • [42] Pulsed laser annealing of self-organized InAs/GaAs quantum dots
    Chakrabarti, S
    Fathpour, S
    Moazzami, F
    Phillips, J
    Lei, Y
    Browning, N
    Bhattacharya, P
    JOURNAL OF ELECTRONIC MATERIALS, 2004, 33 (04) : L5 - L8
  • [43] Effect of matrix on InAs self-organized quantum dots on InP substrate
    Ustinov, VM
    Weber, ER
    Ruvimov, S
    Liliental-Weber, Z
    Zhukov, AE
    Egorov, AY
    Kovsh, AR
    Tsatsul'nikov, AF
    Kop'ev, PS
    APPLIED PHYSICS LETTERS, 1998, 72 (03) : 362 - 364
  • [44] Si doping effect on self-organized InAs/GaAs quantum dots
    Zhao, Q
    Feng, SL
    Ning, D
    Zhu, HJ
    Wang, ZM
    Deng, YM
    JOURNAL OF CRYSTAL GROWTH, 1999, 200 (3-4) : 603 - 607
  • [45] Exciton localization and temperature stability in self-organized InAs quantum dots
    Lubyshev, DI
    GonzalezBorrero, PP
    Marega, E
    Petitprez, E
    LaScala, N
    Basmaji, P
    APPLIED PHYSICS LETTERS, 1996, 68 (02) : 205 - 207
  • [46] Resonant Raman scattering in self-organized InAs/GaAs quantum dots
    Heitz, R
    Born, H
    Hoffmann, A
    Bimberg, D
    Mukhametzhanov, I
    Madhukar, A
    APPLIED PHYSICS LETTERS, 2000, 77 (23) : 3746 - 3748
  • [47] Photovoltage and photoreflectance spectroscopy of InAs/GaAs self-organized quantum dots
    Beijing Normal Univ, Beijing, China
    Appl Phys Lett, 18 (2657-2659):
  • [48] Wavelength selective charge accumulation in self-organized InAs/GaAs quantum dots
    Warming, T
    Guffarth, F
    Heitz, R
    Kapteyn, C
    Brunkov, P
    Ustinov, VM
    Bimberg, D
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (04) : S51 - S53
  • [49] Recombination of many-particle states in InAs self-organized quantum dots
    Yuan, ZL
    Foo, ERAD
    Ryan, JF
    Mowbray, DJ
    Skolnick, MS
    Hopkinson, M
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2001, 224 (02): : 409 - 412
  • [50] 1.75 μm emission from self-organized InAs quantum dots on GaAs
    Ustinov, VM
    Egorov, AY
    Zhukov, AE
    Kovsh, AR
    Ledentsov, NN
    Maximov, MV
    Volovik, BV
    Tsatsul'nikov, AF
    Kop'ev, PS
    Alferov, ZI
    Soshnikov, IP
    Zakharov, N
    Werner, P
    Bimberg, D
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 1143 - 1145
12345