Exciton localization and temperature stability in self-organized InAs quantum dots

被引：273
|
作者：
Lubyshev, DI [1 ]
GonzalezBorrero, PP [1 ]
Marega, E [1 ]
Petitprez, E [1 ]
LaScala, N [1 ]
Basmaji, P [1 ]
机构：
[1] UNIV SAO PAULO, INST FIS SAO CARLOS, BR-13960970 SAO CARLOS, SP, BRAZIL
来源：
APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 02期
关键词：
D O I：
10.1063/1.116461
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigated the temperature effect on exciton localization in self-organized InAs quantum dots. Quenching energy for excitons in reference quantum well and quantum dots was found to be 2 and 7 meV, respectively. Thermoactivation energy of electron-hole emission through a GaAs barrier in the quantum dots was measured as 46 meV. We observed an unusual decrease of photoluminescence peak full width at half maximum with temperature, suggesting suppression of nonpredominant size quantum dot emissions due to carrier tunneling between nearby dots. (C) 1996 American Institute of Physics.
引用
收藏
页码：205 / 207
页数：3
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