Modeling of source-gated transistors in amorphous silicon

被引：11
|
作者：
Balon, F [1 ]
Shannon, JM [1 ]
机构：
[1] Univ Surrey, Adv Technol Inst, SEPS, Guildford GU2 7XH, Surrey, England
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2005年 / 152卷 / 08期
关键词：
D O I：
10.1149/1.1946507
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The most important advantage of a source-gated transistor compared with a field-effect transistor (FET) is its low saturation voltage and high output impedance. Here we model a reverse biased gated Schottky barrier source in hydrogenated amorphous silicon and show good qualitative agreement between the calculated effect of source geometry and measurements. Furthermore, calculations of electron concentration profiles in the source show why the source-gated transistor in hydrogenated amorphous silicon is more stable than an equivalent FET. (c) 2005 The Electrochemical Society. All rights reserved.
引用
收藏
页码：G674 / G677
页数：4
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