Quantification of AES depth sputter profiling: Characterization of Cu-Co multilayers interfaces

Depth profiling analysis by AES combined with ion sputtering is employed for the characterization of Co-Cu multilayer interfaces prepared either by RF sputter deposition or by electrodeposition. Depth concentration profiles are derived from Auger profiles with appropriate corrections of elemental sensitivities, escape lengths of Auger electrons and from changes of the sputter rate occuring at interfaces with composition; they are expressed as atomic densities which can provide significant atomic balances, film thicknesses and depth resolution measurements, Microroughness induced by sputtering is widely improved by the Zalar rotation method during etching, so the remaining contribution (7-10 nm) to the interface broadening mainly consists with atomic mixing whereas important resolution losses (Delta Z > 20 nm) observed in electrodeposited layers as well as in sputtered materials at Co-->Cu interfaces can be attributed to the sample preparation rather to the sputtering process itself.