Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures

被引：4
|
作者：
Sun, BQ
Jiang, DS
Pan, Z
Li, LH
Wu, RH
机构：
[1] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷
关键词：
molecular beam epitaxy; quantum wells; semiconducting IIIV materials;
D O I：
10.1016/S0022-0248(01)00756-4
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have investigated transitions above and below band edge of GaNAs/GaAs and InGaNAs/GaAs single quantum wells (QWs) by photoluminescence (PL) as well as by absorption spectra via photovoltaic effects. The interband PL peak is observed to be dominant under high excitation intensity and at low temperature. The broad luminescence band below band edge due to the nitrogen-related potential fluctuations can be effectively suppressed by increasing indium incorporation into InGaNAs. In contrast to InGaNAs/GaAs QWs, the measured interband transition energy of GaNAs/GaAs QWs can be well fitted to the theoretical calculations if a type-II band lineup is assumed. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：501 / 505
页数：5
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