Interband luminescence and absorption of GaNAs/GaAs single-quantum-well structures

被引：64
|
作者：
Sun, BQ
Jiang, DS
Luo, XD
Xu, ZY
Pan, Z
Li, LH
Wu, RH
机构：
[1] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 20期
关键词：
D O I：
10.1063/1.126498
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated the interband electron transitions in a GaNAs/GaAs single quantum well (QW) by photoluminescence and absorption spectra. The experimental results show that the dominant photoluminescence at low temperature and high excitation intensity originates from transitions within the GaNAs layer. The interband transition energy for QWs with different well widths can be well fitted if a type-II band line up of GaNAs/GaAs QWs is assumed. (C) 2000 American Institute of Physics. [S0003-6951(00)03220-4].
引用
收藏
页码：2862 / 2864
页数：3
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