MONOLAYER ISLANDS IN AN INTERRUPTED-GROWTH TYPE-II SINGLE-QUANTUM-WELL

被引：7

作者：

HEFFERNAN, JF ^{[1
]}

HEGARTY, J ^{[1
]}

PLANEL, R ^{[1
]}

机构：

[1] CNRS,MICROSTRUCT & MICROELECTR LAB,F-92220 BAGNEUX,FRANCE

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.52.7818

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have observed splittings in the luminescence and excitation spectra of a GaAs/AlAs type-II single quantum well with growth interruption at the interfaces. The splittings indicate the formation of large monolayer-smooth islands with a lateral extent much larger than the type-II indirect-exciton Bohr radius. Evidence for exciton diffusion between islands on a microsecond time scale is also presented.

引用

页码：7818 / 7821

页数：4

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