Stress, hydration, and optical absorption in ion-implanted aluminum oxide

被引：1
|
作者：
Arnold, GW [1 ]
机构：
[1] Consultants Int, Tijeras, NM 87059 USA
来源：
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 1998年 / 253卷 / 1-2期
关键词：
Al2O3; ion implantation; stress; hydration; O-vacancy production;
D O I：
10.1016/S0921-5093(98)00711-4
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The surface stress induced by energetic implants (Ar, Xe) promotes ambient hydration (max. similar to 1 at.%) into Al2O3 for collisional deposition energies of 10(21)-10(22) keV cm(-3). Al implants are anomalous in that they induce hydration above 10(21) keV cm(-3) that rises near-linearly with no saturation at the highest deposition levels (similar to 10(24) keV cm(-3)). Both Al and H produce anomalously large F-centre concentrations; stress measurements show near-coincidence behaviour reflecting their influence on O-vacancy production. (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：71 / 77
页数：7
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