Recent improvements in the integration of field emitters into scanning probe microscopy sensors

被引:4
|
作者
Beuer, S. [1 ]
Rommel, M. [1 ]
Petersen, S. [1 ]
Amon, B. [1 ]
Sulzbach, Th. [2 ]
Engl, W. [2 ]
Bauer, A. J. [1 ]
Ryssel, H. [1 ,3 ]
机构
[1] Fraunhofer Inst Integrated Syst & Device Technol, IISB, D-91058 Erlangen, Germany
[2] Nano World Serv GmbH, D-91058 Erlangen, Germany
[3] Univ Erlangen Nurnberg, Chair Electron Devices, D-91058 Erlangen, Germany
关键词
integrated field emitter; SPM sensors; EBID carbon;
D O I
10.1016/j.mee.2008.01.048
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Recent improvements in the fabrication of integrated field emitters with a control electrode into scanning probe microscopy sensors are presented and discussed. Compared to earlier work the precursor material for the electron beam induced deposition of the emitter was changed from a Pt precursor ((CH3C5H4)Pt(CH3)(3)) to a C precursor (C14H10) which leads to a higher process yield and an improved process stability. The change of the material for the control electrode from Pt to Cr results in better compatibility to standard semiconductor processing. The field emitter devices were fabricated by focused charged particle beam processing revealing emission currents of 0.8 mu A/tip for gate voltages of about 65 V. Possible reasons for the high turn-on voltages V-to were investigated by high resolution transmission electron microscopy combined with EDX analyses and approaches for reducing V-to are presented. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:1135 / 1138
页数:4
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