Study of Li diffusion in thin film of Re annealed at high temperatures

被引：1
|
作者：
Cannavo, A. [1 ]
Vacik, J. [1 ]
Hnatowicz, V [1 ]
Ceccio, G. [1 ]
Horak, P. [1 ]
Lavrentiev, V [1 ]
Koster, U. [2 ]
Pasold, G. [3 ]
机构：
[1] Czech Acad Sci, Nucl Phys Inst, Husinec Rez 25068, Czech Republic
[2] Inst Laue Langevin, F-38042 Grenole, France
[3] Friedrih Shiller Univ Jena, Inst Festkorphys, D-07743 Jena, Germany
来源：
JOURNAL OF INSTRUMENTATION | 2020年 / 15卷 / 05期
关键词：
Inspection with neutrons; Instrumentation for radioactive beams (fragmentation devices; fragment and isotope; separators incl. ISOL; isobar separators; ion and atom traps; weak-beam diagnostics; radioactive-beam ion sources); Interaction of radiation with matter; RADIOACTIVE-ION-BEAMS; LITHIUM; RELEASE;
D O I：
10.1088/1748-0221/15/05/P05010
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Depth profiles of Li-6 implanted into high-melting point rhenium refractory metal has been measured for as-implanted, as well as thermally annealed samples using a non-destructive Thermal Neutron Depth Profiling technique at the LWR-15 research reactor in Rez. The Gaussianlike shape, typical for as-implanted Li-depth profile, is preserved after the thermal annealing at high temperature demonstrating the activation of the Li atom diffusion process at the Re-target. The diffusion coefficient at 1830 degrees C has been evaluated by the comparison of the Li profiles before and after the thermal annealing. This study aims to investigate the applicability of Re metal in ISOL related applications.
引用
收藏
页数：9
相关论文
共 50 条
  • [41] Study on the Li and B Co-doped diamond thin film
    W. S. Lee
    Jin Yu
    T. Y. Lee
    Journal of Materials Science, 2005, 40 : 5549 - 5551
  • [42] Study of the fluctuation conductivity in YBCO thin film with low transition temperatures
    Alvarez Mino, L.
    MICROELECTRONICS JOURNAL, 2008, 39 (11) : 1318 - 1319
  • [43] Nuclear magnetic resonance study of Li implanted in a thin film of niobium
    Parolin, T. J.
    Shi, J.
    Salman, Z.
    Chow, K. H.
    Dosanjh, P.
    Saadaoui, H.
    Song, Q.
    Hossain, M. D.
    Kiefl, R. F.
    Levy, C. D. P.
    Pearson, M. R.
    MacFarlane, W. A.
    PHYSICAL REVIEW B, 2009, 80 (17):
  • [44] Ab initio investigation of the surface properties of Cu(111) and Li diffusion in Cu thin film
    Xiong, ZH
    Shi, SQ
    Ouyang, CY
    Lei, MS
    Hu, LY
    Ji, YH
    Wang, ZX
    Chen, LQ
    PHYSICS LETTERS A, 2005, 337 (03) : 247 - 255
  • [45] The diffusion of the vortices in high Tc thin film microbridges:: Model and results
    Bernstein, P
    Pannetier, M
    Lecoeur, P
    Doan, TD
    Hamet, JF
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 1999, 13 (29-31): : 3626 - 3634
  • [46] Characterization of Be-implanted GaN annealed at high temperatures
    Ronning, C
    Linthicum, KJ
    Carlson, EP
    Hartlieb, PJ
    Thomson, DB
    Gehrke, T
    Davis, RF
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, 4 : art. no. - G3.17
  • [47] Enhanced dielectric and electrical properties of annealed PVDF thin film
    Arshad, A. N.
    Rozana, M. D.
    Wahid, M. H. M.
    Mahmood, M. K. A.
    Sarip, M. N.
    Habibah, Z.
    Rusop, M.
    8TH INTERNATIONAL CONFERENCE ON NANOSCIENCE AND NANOTECHNOLOGY 2017 (NANO-SCITECH 2017), 2018, 1963
  • [48] Enhanced performance of annealed NiO thin film for UV photodetection
    Chanu, Laishram Thoibileima
    Alam, Mir Waqas
    Farhan, Mohd
    Singh, Naorem Khelchand
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2023, 129 (09):
  • [49] Structural and Gas Sensing Properties of Annealed ZnO Thin Film
    Al-Assiri, M. S.
    Mostafa, M. M.
    Ali, M. A.
    El-Desoky, M. M.
    SILICON, 2016, 8 (03) : 361 - 367
  • [50] X-Ray Diffraction Study of Plasma Exposed and Annealed AlSb Bilayer Thin Film
    Kareem, T. Abdul
    Kaliani, A. Anu
    PLASMA SCIENCE & TECHNOLOGY, 2013, 15 (04) : 382 - 385
12345