GaSb/GaAs quantum dots and rings grown under periodical growth mode by using molecular beam epitaxy

被引：2

作者：

Chen, Hsuan-An ^{[1
,2
]}

Shih, Tung-Chuan ^{[3
]}

Tang, Shiang-Feng ^{[4
]}

Weng, Ping-Kuo ^{[4
]}

Gau, Yau-Tang ^{[4
]}

Lin, Shih-Yen ^{[1
,2
,3
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10764, Taiwan

[2] Acad Sinica, Res Ctr Appl Sci, Taipei 115, Taiwan

[3] Natl Chiao Tung Univ, Dept Photon, Hsinchu, Taiwan

[4] Natl Chung Shan Inst Sci & Technol, Taoyuan, Taiwan

来源：

JOURNAL OF CRYSTAL GROWTH | 2015年 / 425卷

关键词：

Nanostructures; Molecular beam epitaxy; ELECTROLUMINESCENCE;

D O I：

10.1016/j.jcrysgro.2015.03.053

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

GaSb/GaAs quantum dots (QDs) and quantum rings (QRs) are investigated. By using periodical growth interrupts, precise coverage control can be achieved for GaSb QD growth by using a single Ga source. With direct As irradiation to the substrate surface during the post soaking time, the soaking time can be effectively reduced while full ring morphologies and room-temperature QR luminescence can still be obtained by using this method. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：283 / 286

页数：4

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