Growth of stacked GaSb GaAs self-assembled quantum dots by molecular beam epitaxy

被引：24
|
作者：
Suzuki, K [1 ]
Arakawa, Y [1 ]
机构：
[1] Univ Tokyo, Inst Ind Sci, Minato Ku, Tokyo 106, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷
基金：
日本学术振兴会;
关键词：
GaSb; self-assembled quantum dots; stacked structure; molecular beam epitaxy; atomic force microscopy; photoluminescence measurements;
D O I：
10.1016/S0022-0248(99)00021-4
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A stacked structure of self-assembled GaSb/GaAs quantum dots (QDs) has been grown by molecular beam epitaxy in the Stranski-Krastanow growth mode. The stacked structure consists of alternate layers of GaAs, 10 nm thick, and GaSb QDs. The QDs, with nanometer-scale dimensions, were characterized by atomic force microscopy. Furthermore, we observed clearly separated photoluminescence peaks from the QDs and the wetting layer. This result indicates that the growth of the GaSb/GaAs heterostructure is well controlled despite the deposition of a few monolayers. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：1205 / 1208
页数：4
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