Growth of Si-doped GaInP on Ge-on-Si substrates and its photoluminescence characteristics

被引：9
|
作者：
Yang, Changjae [1 ,2 ]
Lee, Sangsoo [1 ]
Shin, Keun Wook [1 ]
Oh, Sewoung [1 ]
Park, Jinsub [3 ]
Kim, Chang-Zoo [3 ]
Park, Won-Kyu [3 ]
Ha, Seung-Kyu [4 ]
Choi, Won Jun [4 ]
Yoon, Euijoon [1 ,5 ,6 ]
机构：
[1] Seoul Natl Univ, Dept Mat Sci & Engn, Hybrid Mat Program WCU, Seoul 151744, South Korea
[2] Korea Adv Nano Fab Ctr, Suwon 443270, Gyeonggi, South Korea
[3] Hanyang Univ, Dept Elect Engn, Seoul 133791, South Korea
[4] Korea Inst Sci & Technol, Nanophoton Res Ctr, Seoul 136791, South Korea
[5] Seoul Natl Univ, Dept Nano Sci & Technol, Grad Sch Convergence Sci & Technol, Suwon 443270, South Korea
[6] Seoul Natl Univ, Energy Semicond Res Ctr, Adv Inst Convergence Technol, Suwon 443270, South Korea
来源：
APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 09期
关键词：
SOLAR-CELLS; TEMPERATURE-DEPENDENCE; AMPHOTERIC BEHAVIOR; DOPANTS; EPITAXY; LAYERS;
D O I：
10.1063/1.3623757
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Optical properties of Si-doped GaInP grown on Ge-on-Si substrates were investigated using photoluminescence (PL). Similar to spontaneously ordered GaInP, two peaks were observed around 1.74 and 1.85 eV at 19 K; however, no satellite peaks were observed in the selected-area diffraction pattern. Based on temperature-dependent PL, the peak at 1.74 eV was attributed to the donor-acceptor pair transition caused by the amphoteric characteristics of Si and/or Ge from the dopant and/or substrate. In addition, the S-shape in the temperature dependence of the 1.85 eV peak was attributed to the interaction of the donor levels with the conduction band of GaInP. (C) 2011 American Institute of Physics. [doi:10.1063/1.3623757]
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页数：3
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