Ferroelectric thin films for optical applications

被引:0
|
作者
Buchal, C [1 ]
Siegert, M [1 ]
机构
[1] Forschungszentrum Julich, Inst Schicht & Ionentech, ISI,IT, D-52425 Julich, Germany
关键词
thin films; optical ferroelectrics; integrated devices;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Presently the installation of optical fibers for high bandwidth communication services experiences an explosive growth on a world wide scale. As a consequence, a growing demand for more complex integrated optical devices is forseeable. At present, the technology for electrooptic integrated devices and components has been mostly satisfied by bulk LiNbO3, which is by far the most important optical ferroelectric. We will review the state of the art of "near-surface-modified"-ferroelectric devices, which have been patterned on bulk substrates and their potential counterparts to be fabricated completely in thin film technology on different substrates. Special emphasis will be laid upon theepitaxy of LiNbO3, BaTiO3 and (Pb, La) (Zr, Ti)O-3.
引用
收藏
页码:1731 / 1740
页数:10
相关论文
共 50 条
  • [41] Optical and electronic applications of sculptured thin films
    Venugopal, VC
    Lakhtakia, A
    Ertekin, E
    ENGINEERED NANOSTRUCTURAL FILMS AND MATERIALS, 1999, 3790 : 195 - 204
  • [42] Diamond/AlN Thin Films for Optical Applications
    Knoebber, F.
    Bludau, O.
    Williams, O. A.
    Sah, R. E.
    Kirste, L.
    Baeumler, M.
    Leopold, S.
    Paetz, D.
    Nebel, C. E.
    Ambacher, O.
    Cimalla, V.
    Lebedev, V.
    2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES, 2010, 1292 : 205 - +
  • [43] Structural, ferroelectric, and optical properties of Pr-NBT-xCTO relaxor ferroelectric thin films
    Huang, Wenhua
    Du, Xingru
    Thatikonda, Santhosh Kumar
    Qin, Ni
    Yao, Chuangye
    Hao, Aize
    Bao, Dinghua
    CERAMICS INTERNATIONAL, 2019, 45 (08) : 10475 - 10480
  • [44] Review Composite and multilayer ferroelectric thin films: processing, properties and applications
    K. P. Jayadevan
    T. Y. Tseng
    Journal of Materials Science: Materials in Electronics, 2002, 13 : 439 - 459
  • [45] A mathematical description of the switching behavior of ferroelectric thin films for FRAM applications
    Chu, F
    INTEGRATED FERROELECTRICS, 2002, 48 : 255 - 262
  • [46] Ferroelectric thin films on Si-substrate for tunable microwave applications
    Abadei, Saeed
    Doktorsavhandlingar vid Chalmers Tekniska Hogskola, 2004, (2139):
  • [47] Multiaxial Molecular Ferroelectric Thin Films Bring Light to Practical Applications
    Tang, Yuan-Yuan
    Li, Peng-Fei
    Liao, Wei-Qiang
    Shi, Ping-Ping
    You, Yu-Meng
    Xiong, Ren-Gen
    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2018, 140 (26) : 8051 - 8059
  • [48] An overview of various techniques for preparation of ferroelectric thin films for device applications
    Dat, R
    Shih, HD
    INTEGRATED THIN FILMS AND APPLICATIONS, 1998, 86 : 1 - 14
  • [49] ELECTRICAL CHARACTERISTICS OF FERROELECTRIC PZT THIN-FILMS FOR DRAM APPLICATIONS
    MOAZZAMI, R
    HU, CM
    SHEPHERD, WH
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (09) : 2044 - 2049
  • [50] A mathematical description of the switching behavior of ferroelectric thin films for FRAM applications
    Fan, Chu
    Integrated Ferroelectrics, 2002, 48 : 255 - 262