Ferroelectric thin films for optical applications

被引：0

作者：

Buchal, C ^{[1
]}

Siegert, M ^{[1
]}

机构：

[1] Forschungszentrum Julich, Inst Schicht & Ionentech, ISI,IT, D-52425 Julich, Germany

来源：

INTEGRATED FERROELECTRICS | 2001年 / 35卷 / 1-4期

关键词：

thin films; optical ferroelectrics; integrated devices;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Presently the installation of optical fibers for high bandwidth communication services experiences an explosive growth on a world wide scale. As a consequence, a growing demand for more complex integrated optical devices is forseeable. At present, the technology for electrooptic integrated devices and components has been mostly satisfied by bulk LiNbO3, which is by far the most important optical ferroelectric. We will review the state of the art of "near-surface-modified"-ferroelectric devices, which have been patterned on bulk substrates and their potential counterparts to be fabricated completely in thin film technology on different substrates. Special emphasis will be laid upon theepitaxy of LiNbO3, BaTiO3 and (Pb, La) (Zr, Ti)O-3.

引用

页码：1731 / 1740

页数：10

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